SI4410DY-T1-VB 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec SI4410DY-T1-VB
- Power Dissipation (Pd): 4.1W
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 13A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V
- Package: SOP-8
- Manufacturer: VBsemi Elec
